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SCHEMATIC, SIMPLIFIEDQ2 GATE AT EACH SWITCHING EDGE+BATT 25.2 VU3driverR16R17 · 15 ΩCgdQ1onQ2offswitch node+25.2 V in 20 ns00.92.22.2 V · both MOSFETs conduct0.63min. threshold 0.9 VQ1 turns ontime →
Finding 7 of 15 · critical · low confidence · Q1, Q2 gate drive

Q2 can switch on when it should be off.

Each time Q1 turns on, Q2’s drain jumps 25.2 V in about 20 ns. Some of that edge couples through Q2’s gate-drain capacitance into its gate, and the only way out is R17 (15 Ω) and the driver. In our simulation the gate bumps up 0.6 to 2.2 V. Q2’s threshold can be as low as 0.9 V, and it drops when the part is hot. At the bad end of that range, both MOSFETs conduct for part of every edge. That means shoot-through and extra heat, on all four channels.

The fix: put a small Schottky across each gate resistor so the gate pulls down fast, or slow Q1’s turn-on. Then probe Q2’s gate at full battery. That one measurement also settles the low confidence: the datasheet doesn’t give Cgd at low drain voltage, so we had to assume a range.

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From our sample review of the open-source OpenESC-20x20 drone ESC. The drawing is simplified. The numbers come from the report’s calculation and simulation.

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